Summary: | 碩士 === 國立臺北科技大學 === 光電工程系 === 106 === At present, the transparent conductive films on the market mainly produced by tin-doped indium oxide (ITO). If the tin-doped indium oxide (ITO) can be replaced by fluorine-doped tin oxide (FTO), it can reduce costs significantly.
In this experiment, stannous chloride (SnCl2 ∙2H2O) was used as a precursor and doped with ammonium fluoride (NH4F). FTO transparent conductive films were grown on glass substrate by ultrasonic spraying with different solvents and spraying parameters. The crystal structure, conductivity and transmittance of the films were analyzed by X-ray diffraction(XRD), Hall measurement and micro spectrometer.
In this experiment, three different preferred orientations (200), (101), and (211) were investigated. XRD analysis showed that the film with (200) preferred orientation possessed the best crystal structure. Hall measurement revealed that the sample with (101) preferred orientation had the best conductivity of 2.2×10-4(Ω-cm) and the highest carrier concentration of 1.5×1021 (cm-3). As the transmittance of visible light , the film with (200) preferred orientation could reach up to 87%
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