| Summary: | 碩士 === 國立虎尾科技大學 === 電子工程系碩士班 === 106 === The paper is divided into two parts. The first part deals with the material of (1-x)TiO2-xSrTiO3 with the sample shape of dielectric resonator to explore the microwave dielectric properties at different doping ratios(x=0~0.1). The second part studies the material of 0.975TiO2-0.025CaTiO3 thin films, To conduct microwave dielectric analysis of TiO2-CaTiO3 thin material under the sputtering conditions with different gas ratios.
The DR samples are made by solid state reaction method. TiO2 is adopted as the major material doped with different proportions of SrTiO3 with x=0~0.1. At a fixed firing temperature of 1200°C, two sets of samples are made under two different sintering temperatures of 1300°C and 1350°C. The microwave dielectric properties and physical properties of the DR samples are measured by network analyzer and the Archimedes measurement respectively. The results have showed that as the sintering temperature increased the doping concentration and samples density are increased there is a better performance of microwave dielectric characteristics. Through the X-ray analysis the diffraction peak intensity also increases with the increasing of SrTiO3 doping amount .
The thin films formulation of (1-x)TiO2-xCaTiO3(x=0.025) adopted the reactive radio magnetic controlled sputtering method with a fixed doped ratio and sputtering method ,Under the growth conditions of various gas ratios of Ar and O2, thin films samples are measured by the resonant cavity perturbation technique using a network analyzer to explore the dielectric properties of the films under different doping environments.
|
|---|
