Analysis of Voltage Adjustment and Reliability of UTBB FDSOI
碩士 === 國立高雄大學 === 電機工程學系-電子構裝整合技術產業碩士專班 === 106 === This thesis characterizes n-type ultra-thin body and buried oxide, fully depleted silicon on insulator (UTBB FDSOI) and reliability with different back-biasing modulation. A positive back-biasing results in a decrease of threshold voltages and an i...
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| Format: | Others |
| Language: | zh-TW |
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2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/rt72bq |
| Summary: | 碩士 === 國立高雄大學 === 電機工程學系-電子構裝整合技術產業碩士專班 === 106 === This thesis characterizes n-type ultra-thin body and buried oxide, fully depleted silicon on insulator (UTBB FDSOI) and reliability with different back-biasing modulation. A positive back-biasing results in a decrease of threshold voltages and an increase of drive currents while it also brings out the increase of the subthreshold swing and leakage current. A high degree of performance enhancement via back-biasing also results in a severe electrical degradation. i.e., a negative back-basing lower the performance but eliminate degradation speed. The degradation time as a function of stressed voltages demonstrate a competitive downscaling degradation of UTBB FDSOI compared to FinFETs.
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