Enhancement of device performance and carrier transport in InGaN/GaN multiple-quantum well light emitting diodes with multilayer graphene transparent electrodes on the p-layer and on the sapphire substrate

碩士 === 國立高雄大學 === 應用物理學系碩士班 === 106

Bibliographic Details
Main Authors: WANH, YING-Hsiang, 王盈翔
Other Authors: Feng, Shih-Wei
Format: Others
Language:en_US
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/utvzf6
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spelling ndltd-TW-106NUK005040072019-05-16T01:00:01Z http://ndltd.ncl.edu.tw/handle/utvzf6 Enhancement of device performance and carrier transport in InGaN/GaN multiple-quantum well light emitting diodes with multilayer graphene transparent electrodes on the p-layer and on the sapphire substrate 在p層和藍寶石基板上使用多層石墨烯透明電極的氮化銦鎵/氮化鎵多重量子井發光二極體中增強元件性能和載子傳輸 WANH, YING-Hsiang 王盈翔 碩士 國立高雄大學 應用物理學系碩士班 106 Feng, Shih-Wei 馮世維 2018 學位論文 ; thesis 74 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立高雄大學 === 應用物理學系碩士班 === 106
author2 Feng, Shih-Wei
author_facet Feng, Shih-Wei
WANH, YING-Hsiang
王盈翔
author WANH, YING-Hsiang
王盈翔
spellingShingle WANH, YING-Hsiang
王盈翔
Enhancement of device performance and carrier transport in InGaN/GaN multiple-quantum well light emitting diodes with multilayer graphene transparent electrodes on the p-layer and on the sapphire substrate
author_sort WANH, YING-Hsiang
title Enhancement of device performance and carrier transport in InGaN/GaN multiple-quantum well light emitting diodes with multilayer graphene transparent electrodes on the p-layer and on the sapphire substrate
title_short Enhancement of device performance and carrier transport in InGaN/GaN multiple-quantum well light emitting diodes with multilayer graphene transparent electrodes on the p-layer and on the sapphire substrate
title_full Enhancement of device performance and carrier transport in InGaN/GaN multiple-quantum well light emitting diodes with multilayer graphene transparent electrodes on the p-layer and on the sapphire substrate
title_fullStr Enhancement of device performance and carrier transport in InGaN/GaN multiple-quantum well light emitting diodes with multilayer graphene transparent electrodes on the p-layer and on the sapphire substrate
title_full_unstemmed Enhancement of device performance and carrier transport in InGaN/GaN multiple-quantum well light emitting diodes with multilayer graphene transparent electrodes on the p-layer and on the sapphire substrate
title_sort enhancement of device performance and carrier transport in ingan/gan multiple-quantum well light emitting diodes with multilayer graphene transparent electrodes on the p-layer and on the sapphire substrate
publishDate 2018
url http://ndltd.ncl.edu.tw/handle/utvzf6
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