Study of thin-film transistors with IGZO oxide-based semiconductors film

• Main Authors: Sung-Ming Hsu, 徐崧銘
• Other Authors: Miin-Horng Juang
• Format: Others
• Language: en_US
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/he3s3w

碩士 === 國立臺灣科技大學 === 電子工程系 === 106 === 　　Attention has been focused on a technique for forming a transistor using a semiconductor thin film formed over a substrate having an insulating surface (TFT). The transistor is applied to a wide range of electronic devices such as an integrated circuit or a display device. 　　Amorphous Silicon (a-Si) semiconductor material is widely known as a material for TFT. However, an oxide semiconductor such as amorphous In–Ga–Zn–O (a-IGZO) has been attracting attention. IGZO exhibits a higher mobility than a-Si. The low temperature sputtering of IGZO is advantageous by making it suitable for flexible plastic displays. 　　When a transistor is scaled down, some problems would emerge, including large leakage current, hot carrier effect, short-channel effect and so on. Therefore, intention to improve TFT device performance is the motive for this work. 　　All the undesirable effects are mainly caused by the high electric field near drain region. In this study, to obtain high reliability TFT, LDD structure and gate-overlap LDD structure are undertaken for lessening the electric field near drain region. Compared to the conventional IGZO TFT, the LDD IGZO structure and the gate-overlap IGZO LDD structure are both found to significantly reduce the impact ionization.