Design of a Low Phase-Noise Oscillator and Super-Regenerative Receiver

碩士 === 國立臺灣科技大學 === 電子工程系 === 106 === Low power integrated circuit designs were introduced in this thesis. The goal is to realize innovative RFIC design which can contribute in lowering power consumption while maintain acceptable performance. There are three chip designs proposed in this work namely...

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Bibliographic Details
Main Author: Joseph Demferlee O. Tatel
Other Authors: Sheng-Lyang Jang
Format: Others
Language:en_US
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/v8v8dd
Description
Summary:碩士 === 國立臺灣科技大學 === 電子工程系 === 106 === Low power integrated circuit designs were introduced in this thesis. The goal is to realize innovative RFIC design which can contribute in lowering power consumption while maintain acceptable performance. There are three chip designs proposed in this work namely “Low Phase-Noise Oscillator with Filter for Harmonic Suppression”, “A Fully-Integrated 4mW Super-Regenerative Receiver (SRR) with TSPC Divide-by-8 Frequency Divider”, and “A 1.1pJ/bit OOK Transceiver”. The design of oscillator was presented in chapter 6. The proposed low power and low phase-noise CMOS oscillator was designed using a parallel LC filter in shunt with a differential high-pass filter for harmonic suppression. The proposed p-core oscillator was fabricated in the TSMC 0.18μm SiGe BiCMOS technology, and the die area is 1.163 × 1.149 mm2. At the power consumption of 1.53 mW, the phase noise is -130.31dBc/Hz at 1 MHz offset frequency from the center frequency 2.32 GHz. The figure of merit (FOM) is -195.77dBc/Hz. Chapter 7 presents a low power super-regenerative receiver centered at 3.6 GHz. The receiver was designed in the TSMC 0.18 μm CMOS process and consists of LNA, VCO, envelope detector and divide-by-eight true-single phase clocking (TSPC) frequency divider. The effort to replace conventional D Flip flop frequency divider by a TSPC based frequency divider was done. TSPC promises minimum chip area and offers low power consumption. Moreover, both LNA and VCO share the same inductor for smaller die area. As a whole, the chip SRR consumes 4.01 mW at 1.5 V and achieved die area is 1.045 ×0.896 mm2. Lastly, a transceiver was introduced in chapter 8. The OOK transceiver have chip area of 1.054 × 1.081 mm2. The chip was implemented in TSMC 0.18 µm CMOS process technology and it can operate at 4GHz band.