The Investigation and Analysis of High Frequency and High Power Density AlGaN/GaN HEMT on Silicon Substrate
碩士 === 國立臺灣大學 === 機械工程學研究所 === 106 === In this thesis, we mainly focus on AlGaN/GaN High electron mobility transistor fabricated on Silicon substrate, hoping to operate at high power and high frequency conditions. Two types of structure were designed to enhance electric characteristic, one is Gate f...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wkfag7 |