Design and Research of CMOS Power Amplifier for 5G Communications
碩士 === 國立臺灣大學 === 電信工程學研究所 === 106 === In this thesis, a transformer-based class-AB power amplifier (PA) fabricated in 28-nm CMOS LP process is presented. The proposed PA is aimed at 28 GHz. The measured small-signal gain at 28 GHz is 21.8-25.2 dB, saturated power is 18.9-19.1 dBm, and maximum PAE a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3g6u9v |