Design and Research of CMOS Power Amplifier for 5G Communications
碩士 === 國立臺灣大學 === 電信工程學研究所 === 106 === In this thesis, a transformer-based class-AB power amplifier (PA) fabricated in 28-nm CMOS LP process is presented. The proposed PA is aimed at 28 GHz. The measured small-signal gain at 28 GHz is 21.8-25.2 dB, saturated power is 18.9-19.1 dBm, and maximum PAE a...
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3g6u9v |
| Summary: | 碩士 === 國立臺灣大學 === 電信工程學研究所 === 106 === In this thesis, a transformer-based class-AB power amplifier (PA) fabricated in 28-nm CMOS LP process is presented.
The proposed PA is aimed at 28 GHz. The measured small-signal gain at 28 GHz is 21.8-25.2 dB, saturated power is 18.9-19.1 dBm, and maximum PAE achieves above 35%. Tested with 64-QAM OFDM/ 9.5-dB PAPR modulated signal, the proposed PA can achieve linear output power up to 10 dBm at EVM of -25 dBc and maintains a high PAE of 10.6%. In addition, tests for the state-of-the-art 5G NR signals are also presented in the last chapter.
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