Strain Relaxation Properties of InAsyP1-y MetamorphicBuffer Layers for SWIR Photodetector
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === In this paper, we propose to design and grow a metamorphic step-graded InAsP buffer layer on n+ InP substrate to gradually enlarge the lattice constant so as to allow the InGaAs detectors to be grown strain-freely on top of the buffer layers. Reciprocal space m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6vchc5 |