| Summary: | 碩士 === 國立臺灣大學 === 物理學研究所 === 106 === In this study, we grew Bi nanowires through thermal evaporation and catalyst-free mechanism in the high-vacuum chamber.
First, we used XRD to measure the thickness of the Bi films grown at different temperatures. From this, we can calibrate the deposition rate of Bi on glass. Then, through SEM, we can observe the morphology of the sample surface. Using the same deposition procedure on other substrates, including mica, graphite and C60, we found that this method was not effective for growing Bi nanowires.
Since the result on the films of C60 was better, we tried to coat a thin film at low temperature first, and then grew nanowires at high temperature. It was successful in growing many long Bi nanowires. Then, applying the same method to other substrates, we found that it did not work well under the same conditions.
Next, in order to verify the proposed growth mechanism, we used AFM to check the surface of the substrates.
At last, contact transfer of the nanowires from the substrates had better result for the C60 substrates. We used electron beam lithography system to fabricate the circuit for electrical tests so we can compare the resistivity of Bi nanowires of different diameters.
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