Development of Self-Consistent NEGF-Poisson Quantum Transport Simulator and Application in Nanoscale Devices
碩士 === 國立臺灣大學 === 光電工程學研究所 === 106 === As the gate length of metal-oxide-semiconductor-field-effect transistors has been scaled down into the sub-10 nm regime, semi-classical Boltzmann transport theory can no longer accurately describe the behavior of electronic transport, since the quantum mechanic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92a2h4 |