| Summary: | 博士 === 國立臺灣大學 === 光電工程學研究所 === 106 === Contact resistance is crucial for graphene base devices. We have developed a polymer-free (PF) transfer method to obtain a clean graphene surface to improve the graphene-metal contact. We also examined the optimum annealing temperature and time for the PF transfer of graphene, and observed that annealing at 100 °C for 1 h could reduce the contact resistance of graphene/Au from 833 to 305 Ω•µm. To further tune the work function of graphene to reduce contact resistance, we report a solution doping combine with PF method , and the contact resistance is dramatically reduced to 24 Ω•µm by P-doped graphene, which is the best result obtained in this study . We also developed a hydrophobic octadecyltrichlorosilane (ODTS) self-assembled monolayer (SAM) to prevent the substrate effect and combined this with the PF graphene and low contact resistance process. The mobility was enhanced by 200%, and the highest mobility value recorded was 14400 cm2 V−1 s−1for intrinsic graphene after annealing. And the mobility of P-doped graphene is 5173 cm2 V−1 s−1 which is similar to the intrinsic graphene on ODTS. Most importantly, our research also gives an investigation of graphene-metal interfaces to improve the metal contact resistance. And these results can be applied on many graphene metal base devices and significantly improving the performance.
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