Structure design of Avalanche photodiode

• Main Authors: Chiao-Cheng Yu, 游朝政
• Other Authors: 林浩雄
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/g4693h

碩士 === 國立臺灣大學 === 光電工程學研究所 === 106 === This research studies the relation between the structure parameters of Avalanche photodiode(APD) and the ratio of maximum electric field in the edge and central region.In addition, the effects of variation of structure parameters on breakdown voltage are studied and get the range where the variation of doping concentration of absorption layer and multiplication layer and thickness of multiplication layer doesn’t drastically change the breakdown voltage: doping concentration of absorption layer and multiplication layer N_D lower than 1×10^14(1/cm^3)and space charge of charge layer ranging from 3.8×10^(-7) (C·cm^(-2) ) to 4.8×10^(-7) (C·cm^(-2)). This research also concludes that the larger the minimum of radius of curvature is,the smaller the ratio of maximum electric field in the edge and central region is.Zinc diffusion in InP is simulated using Sentaurus TCAD and the doping profile has been gotten.The method to calculate the radius of curvature of the PN junction of the doping profile has been studied.The steps of designing doping and thickness of every layer of an APD are summarized and are demonstrated in an example.The APD sample of the department is measured and analyzed.Disadvantages of the sample have been proposed.