Room temperature synthesis of Inorganic perovskite CsPbBr3 for applications of resistive random access memory(RRAM)

• Main Authors: Chen, Wei-Hao, 陳暐豪
• Other Authors: Lee, Ya-Ju
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/q9236t

碩士 === 國立臺灣師範大學 === 光電科技研究所 === 106 === Inorganic perovskite CsPbBr3 is a semiconductor material that not only has excellent semiconductor material properties, but also has good ionic conductivity, good light absorption and low cost. All these properties make these types of materials have good potential for Resistance Random Access Memory (RRAM). In this experiment, the inorganic perovskite was synthesized by the method of anti-solvent synthesis at room temperature, and used the spin coating method to form the perovskite thin film for the insulating layer of the Metal/Insulator/Metal sandwich structure on RRAM. Also, we repaired the defect of perovskite thin film and compared with the non-repaired perovskite thin film. For the non-repaired perovskite thin film the set voltage was 0.6 V, and the Reset voltage was -1.9 V. For the repaired perovskite thin film the Set voltage was 0.8 V, and the Reset voltage is -2.6 V. We found that after repairing process the Set and Reset voltages all become larger than non-repaired, but the I-V curve is more stable than non-repaired. In addition, the non-repaired Ag/SiO3/CsPbBr3/SiO2/ITO samples were irradiated with UV light, and the current changes during low-resistance state LRS and high-resistance state HRS were measured. It was found that photocurrent was generated when UV light was irradiated, and resulting current increase in both HRS and LRS.