| Summary: | 碩士 === 國立臺灣師範大學 === 光電科技研究所 === 106 === In recent years, ferroelectric material has been extensively investigated. Hf-based oxide materials with ferroelectricity have the potential for application on FeRAM. Therefore, it is considered as one of the non-volatile memory candidates of emerging technologies. The FeFET (Ferroelectric Field Effect Transistor) has many advantages, such as fast read and write speeds, low operation voltage, and high endurance operation. Conventional Perovskite-type ferroelectric material, such as BaTiO3 (BTO) and Pb (ZrxTi1-x) O3 (PZT), has the issues of the process compatibility and scaling down for FeRAM applications. The HfO2-based with ferroelectricity may for CMOS applications due to process compability.
The subject of this study will be divided into three parts. The first part is the results of ferroelectric Hf1-xZrxO2 planar MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and FinFET (Fin Field-Effect Transistor) for data retention and endurance. The second part is FTJ (Ferroelectric Tunneling Junction) including the dependence on voltages, HZO thickness, and interface treatment in chapter 3. The third part is deep learning (training) of FeFET and MFM in chapter 4.
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