CVD Growth of Large-Area Monolayer Transition Metal Dichalcogenides and its Electronic Device Properties
碩士 === 國立清華大學 === 電子工程研究所 === 106 === Transition metal dichalcogenide, TMDC, has been researched in recent years and got great progress in digit、analogy、microwave、optical、flexible devices, and large-area growth is the basis of all above. While CVD can grow large-area films now, but they are polycrys...
Main Authors: | Liu, Hsin-Chen, 劉信成 |
---|---|
Other Authors: | Chiu, Po-Wen |
Format: | Others |
Language: | zh-TW |
Published: |
2017
|
Online Access: | http://ndltd.ncl.edu.tw/handle/5b8zfb |
Similar Items
-
Doping Monolayer Transition Metal Dichalcogenides and Electronic Devices
by: Li, Chien Hsiang, et al.
Published: (2016) -
Large-area CVD growth of two-dimensional transition metal dichalcogenides and monolayer MoS₂ and WS₂ metal-oxide-semiconductor field-effect transistors
by: Shen, Pin-Chun
Published: (2017) -
Tunable Electronic Properties of Lateral Monolayer Transition Metal Dichalcogenide Superlattice Nanoribbons
by: Jinhua Wang, et al.
Published: (2021-02-01) -
Broadband and large-area platforms for enhancing optical intensity in monolayer transition metal dichalcogenides
by: Chen, Yen-Chun, et al.
Published: (2018) -
Infrared and Visible Magneto Optical Studies of Large Area Monolayer Transition Metal Dichalcogenides
by: Arik, Mumtaz Murat
Published: (2019)