X-parameter Model for SiGe HBT Power Amplifier Design Operating in Avalanche Breakdown Region
碩士 === 國立中山大學 === 電機工程學系研究所 === 106 === The prediction method of power contours from X-parameter model at different load impedance, this method is faster and wider than the conventional Load-pull method to predict SiGe HBT’s power contour , get optimization load impedance. In SiGe HBT , the linearit...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/u5g95e |