Sulfurization of ZnO/AlO heterostructures: material synthesis and characterizations of physical properties
碩士 === 國立中山大學 === 物理學系研究所 === 106 === This dissertation studies the main purpose of sulfurization of ZnO/AlO heterostructures. First, zinc oxide buffer layer is grown on the c-plane alumina substrate by magnetron sputtering. Then, ZnO/AlO film is deposited using an atomic layer deposition system at...
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| Format: | Others |
| Language: | en_US |
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2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37q6v9 |
| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 106 === This dissertation studies the main purpose of sulfurization of ZnO/AlO heterostructures. First, zinc oxide buffer layer is grown on the c-plane alumina substrate by magnetron sputtering. Then, ZnO/AlO film is deposited using an atomic layer deposition system at 177 ˚C. Initially in the zinc oxide monolayer film for sulfur, confirm the basis for the parameters of sulfurization process. Then, the sulfurization conditions were observed at different sulfurization temperatures and different layers of the multilayer film. The diffusion situation between the layers and structural characteristic was analyzed by TEM and XRD systems. It is desirable to convert the zinc oxide/alumina film structure to a zinc sulfide/aluminum sulfide film by a sulfurization process.
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