Study on hysteresis in two-dimensional InSe field effect transistors
碩士 === 國立中山大學 === 物理學系研究所 === 106 === Field effect transistors (FETs) made by few-layered indium selenide (InSe) exhibit good electrical characteristics. However, hysteresis is often observed in InSe-FETs which can affect intrinsic electrical properties. Therefore, investigating the possible factors...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/tjd5fh |