The carrier recombination of InAs/GaAs quantum dots
碩士 === 國立中山大學 === 物理學系研究所 === 106 === The purpose of this study is to examine the energy released due to excitation and recombination of single-layered and multi-layered InAs/GaAs quantum dots samples at different conditions. The temperature-dependence and power-dependence photoluminescence and time...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/fvss9a |