Fabrication of graphene-based flexible transparent conductive film by floating-assisted method and its liquid crystal device application

碩士 === 國立中山大學 === 化學系研究所 === 106 === Flexible transparent conductive films are rapidly developed and widely used in wearable devices. However, the most commonly used transparent conductive electrode material is indium tin oxide (ITO), which remains several problems of brittleness and poor environmen...

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Bibliographic Details
Main Authors: Yuan-Shuo Chang, 張元碩
Other Authors: Chun-Hu Chen
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/s966s7
Description
Summary:碩士 === 國立中山大學 === 化學系研究所 === 106 === Flexible transparent conductive films are rapidly developed and widely used in wearable devices. However, the most commonly used transparent conductive electrode material is indium tin oxide (ITO), which remains several problems of brittleness and poor environmental stability, making it difficult to be used as flexible transparent conductive films. Therefore, in this study, we succeeded in synthesizing large-sized graphene oxide aqueous solution with chemical functionalization of bulky alkyl groups. These functionalized graphene oxides (FGO) were spin-coated on a 6-inch SiO2 wafer. A layer of PMMA (poly(methyl methacrylate)) was also spin-coated on top of the functionalized graphene oxide film to enable floating-assisted method to peel off a highly transparent FGO film on the water surface. We reduced the functionalized graphene oxide film on the support of copper foil under argon environment at 400℃, and then transferred it onto the conductive polymer PEDOT film to yield PEDOT/rFGO composite films. These composite films exhibit high transmittance (93.57%), good conductivity (371.06 ± 48.64 Ω/sq), high stability, and excellent mechanical strength against over 10000 times of bending. This composite thin film was successfully combined with polymer dispersed liquid crystal (PDLC) for fabrication of flexible smart films (switchable films), which exhibit 64% transmittance with the rise time of 1.244 ms and the fall time of 183.429 ms under the applied voltage of 110 V AC.