| Summary: | 碩士 === 國立東華大學 === 光電工程學系 === 106 === This thesis mainly discusses the application of molybdenum oxide (MoOX) to Passived Emitter and Rear Cell (PERC), hoping to improve efficiency through the wide band gap and high work function of MoOX. At present, the passivation layer on silicon solar cell is silicon oxynitride (SiON) or aluminum oxide (Al2O3). In addition, we also research a possible material, Graphene Oxide (GO), as passivation layer. These passivation layers are not conductive, so passivation layers are usually partially opened to make underneath metal contact with silicon directly. However, the laser-opened holes have a limited area and also cause contact resistance. Therefore, diffusion of metal in the silicon by high temperature is needed in commercial solar cells. However, such a high-temperature process will also cause the efficiency degradation. It is possible to introduce MoOX between silicon and metal to help carrier conduction utilizing its property of high work function to avoid high temperature diffusion process. In our laboratory, the aqueous solution of GO was dropped on the back side of the substrate, and there are holes between GO flakes, which allows the MoOX to directly contact with the substrate without using laser firing and reduces the damage of the laser to the silicon. We first used MoOX to the detector and measured the current-voltage curve to confirm that MoOX helps conduct carriers and improve responsivity. Then MoOX was then applied to solar cells. At present, we didn’t demonstrate a higher efficiency on solar cell based on the combination of GO and MoOX. We speculated that the thickness of the molybdenum oxide may be too thick to affect the conductivity, and it may be necessary to obtain a superior performance on a photodetector after the thickness is reduced.
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