Forming semiconductor nanostructures with photoluminescence by copper-based metal-assisted etching
碩士 === 國立中央大學 === 機械工程學系 === 106 === This research focuses on the metal assistance chemical etching which the copper particles is as the catalyst and HF/H2O2 is the electrolyte. We etched a P-type wafer at various environment (darkroom, luminescence lamp, and UV lamp) at a specificial etching time a...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/kc853v |
| Summary: | 碩士 === 國立中央大學 === 機械工程學系 === 106 === This research focuses on the metal assistance chemical etching which the copper particles is as the catalyst and HF/H2O2 is the electrolyte. We etched a P-type wafer at various environment (darkroom, luminescence lamp, and UV lamp) at a specificial etching time and current density to discuss its influence on silicon nanostructure and photoluminescence.
We discovered the etching rate in depth is very slow under the UV lamp illumination but obtained a densed nanostructure. Moreover, there is a photoluminescence phenomenon while MACE etching was under darkroom etching and the illumination of luminescence lamp.
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