Characterization of the Interface of InAs and GaSb Metal-Oxide-Semiconductor Capacitors
博士 === 國立中央大學 === 電機工程學系 === 106 === Over the last 50 years, Si-based complementary metal-oxide-semiconductor (CMOS) technology has advanced closely following Moore’s Laws, which has in turn facilitated the development of information technology era. However, device scaling of integrated circuits ha...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/be46f8 |