Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation

碩士 === 國立中央大學 === 電機工程學系 === 106 === In this thesis, we have successfully developed a new triangle mesh model by using the axis method for simulating semiconductor devices. To increase the accuracy and the flexibility for the simulation, we developed the 2D barycenter module to calculate the electri...

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Bibliographic Details
Main Authors:	Tzu-Wei Huang, 黃梓維
Other Authors:	蔡曜聰
Format:	Others
Language:	zh-TW
Published:	2018
Online Access:	http://ndltd.ncl.edu.tw/handle/kb2ebd

id	ndltd-TW-106NCU05442041
record_format	oai_dc
spelling	ndltd-TW-106NCU054420412019-09-12T03:37:35Z http://ndltd.ncl.edu.tw/handle/kb2ebd Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation 用軸線法求三角形內部向量及二維元件模擬 Tzu-Wei Huang 黃梓維碩士國立中央大學電機工程學系 106 In this thesis, we have successfully developed a new triangle mesh model by using the axis method for simulating semiconductor devices. To increase the accuracy and the flexibility for the simulation, we developed the 2D barycenter module to calculate the electric field, diffusion current and drift current. Furthermore, the simulated resistance are compared to the theoretical value for verification. The axis method is also applied to the PN diode I-V characteristics. Finally we investigate the future applications for the module. 蔡曜聰 2018 學位論文 ; thesis 54 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立中央大學 === 電機工程學系 === 106 === In this thesis, we have successfully developed a new triangle mesh model by using the axis method for simulating semiconductor devices. To increase the accuracy and the flexibility for the simulation, we developed the 2D barycenter module to calculate the electric field, diffusion current and drift current. Furthermore, the simulated resistance are compared to the theoretical value for verification. The axis method is also applied to the PN diode I-V characteristics. Finally we investigate the future applications for the module.
author2	蔡曜聰
author_facet	蔡曜聰 Tzu-Wei Huang 黃梓維
author	Tzu-Wei Huang 黃梓維
spellingShingle	Tzu-Wei Huang 黃梓維 Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation
author_sort	Tzu-Wei Huang
title	Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation
title_short	Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation
title_full	Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation
title_fullStr	Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation
title_full_unstemmed	Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation
title_sort	finding internal vector from the axis method in arbitrary triangle element for 2-d semiconductor device simulation
publishDate	2018
url	http://ndltd.ncl.edu.tw/handle/kb2ebd
work_keys_str_mv	AT tzuweihuang findinginternalvectorfromtheaxismethodinarbitrarytriangleelementfor2dsemiconductordevicesimulation AT huángzǐwéi findinginternalvectorfromtheaxismethodinarbitrarytriangleelementfor2dsemiconductordevicesimulation AT tzuweihuang yòngzhóuxiànfǎqiúsānjiǎoxíngnèibùxiàngliàngjíèrwéiyuánjiànmónǐ AT huángzǐwéi yòngzhóuxiànfǎqiúsānjiǎoxíngnèibùxiàngliàngjíèrwéiyuánjiànmónǐ
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Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation

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