GaN Selective Epitaxial Growth on Patterned Si(100) Substrate Using MOCVD for Ultra-scaled Hetero-structure FinFET Application

• Main Authors: Chu, Yu-Ting, 朱毓庭
• Other Authors: Chang, Yi
• Format: Others
• Language: en_US
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/yhda8d

碩士 === 國立交通大學 === 國際半導體產業學院 === 106 === III-V compound semiconductor like Gallium Nitride (GaN) material exhibits many advantages for its outstanding physical and electrical characteristics in recent 30years. For example, high breakdown field, wide band gap and high electron drift velocity… etc., thus GaN material is excellent for applications on high current and high voltage electronic devices. Recently, researches using Metal-Organic Chemical Vapor Deposition (MOCVD) to deposit GaN are mostly using sapphire and SiC as growing substrates. However, in consideration of electronic devices development in industry, the processing technology on the silicon (100) substrate is much more mature compared to III-V compound semiconductors. In this research, the object is to selectively grow GaN column with the size of hundred nanometers level on the Si(100) substrate for the integration of III-V material with Si. We utilize the wide band gap property of GaN to reduce breakdown problems, which result from continuous scaling of electronic devices. First, we use furnace to deposit high quality silicon oxide by dry oxidation as mask layer, then using E-beam lithography system and reactive ion etching (RIE) to form nano-patterns. Second, after proper cleaning process, the patterned sample are put into MOCVD chamber for selective area growth (SAG) of GaN. In this thesis, we focus on how to fabricate patterns on the Si(100) substrate and deposit GaN upon for the future development of electronic application components.