GaN Selective Epitaxial Growth on Patterned Si(100) Substrate Using MOCVD for Ultra-scaled Hetero-structure FinFET Application
碩士 === 國立交通大學 === 國際半導體產業學院 === 106 === III-V compound semiconductor like Gallium Nitride (GaN) material exhibits many advantages for its outstanding physical and electrical characteristics in recent 30years. For example, high breakdown field, wide band gap and high electron drift velocity… etc., th...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/yhda8d |