W/E Bias and Oxidation Process Dependence in Endurance of NAND Flash Reliability
碩士 === 國立交通大學 === 電機工程學系 === 106 === In order to understand the degradation mechanism in the tunnel oxide of NAND Flash memory cell, TEG structure is used, instead of conventional NAND Flash memory cell.In previous study, the endurance characteristic was analyzed. Electron trapping and de-trapping w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/e28b9j |