The Effect of Hydrogen Concentration on NAND Flash Memory Reliability

• Main Authors: Yang,Jhih-Siang, 楊智翔
• Other Authors: Riichiro Shirota
• Format: Others
• Language: en_US
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/k44gna

碩士 === 國立交通大學 === 電機工程學系 === 106 === In this thesis, we investigate the reliability of two different hydrogen concentration processes. The impacts of hydrogen concentration on interface state density and VT shifts after bake are studied by comparing two different hydrogen concentration. Higher hydrogen concentration provides more hydrogen molecular and hydrogen atoms to passivate the interface states at Si/SiO2 interface. The interface state density can be reduced around 15.5% in long interval by increasing hydrogen concentration from 4% to 100%. In our measurements, higher hydrogen concentration shows better reliability than lower hydrogen concentration. Moreover longer interval during cycling shows worse transconductance (Gm) and subthreshold swing (SS) degradation in both processes. In retention test, large interface states density would degrade the interval dependence of VT shifts after bake especially in lower hydrogen concentration.