Statistical Investigation of Transconductance Distribution in Program/Erase Cycling of NAND Flash

• Main Authors: Lin, I-Chun, 林怡鈞
• Other Authors: Riichiro Shirota
• Format: Others
• Language: en_US
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/z2rx5t

碩士 === 國立交通大學 === 電信工程研究所 === 106 === In recent years, reliability issues are taken more seriously with the scaling of NAND Flash memory. This thesis investigates the trapped charge generation and impact in the tunneling oxide. Nowadays, there have been many studies on the prediction of the trapped charge generation by monitoring the threshold voltage variation. However, there are still few researches on such issues in consideration of transconductance. Accordingly, we examined the distribution of the trapped charge, and use TCAD to simulate their generation after P/E cycles. Comparing the measurement and the simulation, we proposed a model to predict the trapped charge generation. This study will provide some suggestions for more complete understanding and prediction of the trapped charge in the future research.