Doping effect and process improvement of vertical organic transistors

• Main Authors: Chen, Ya-Tzu, 陳雅慈
• Other Authors: Meng, Hsin-Fei
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/5k74jb

碩士 === 國立交通大學 === 電子物理系所 === 106 === Over the last decade, our team successfully apply poly(3-hexylthiophene) (P3HT) to Space-Charge-Limited Transistor (SCLT) as active layer. In this thesis, we try to make a doping on P3HT with Tetrafluoro-Tetracyanoquinodimethane (F4TCNQ). We apply these doping P3HT to SCLT and Organic field-effect transistor (OFET), and discuss the effect of the doping P3HT upon the electrical characteristic of SCLT and OFET. 　　In addition, our team used to apply an organic polymer poly(3-hexylthiophene) (P3HT) to SCLT. However, P3HT has an issue for its low mobility, which leads to a lower output current of SCLT. Therefore, we try to apply organic polymer to SCLT. We use several methods, Chlorobenzene and non-Halogen material as solvent, different process conditions, to discuss the effect of the active layer thickness and the annealing conditions upon the electrical characteristic of SCLT. Finally, we find the best process conditions, and get a high output current SCLT.