New Methods for Accurate Extraction of Intrinsic RF and AC Performance and Equivalent Circuit Models for High Frequency and RF Noise Simulation in Nanoscale MOSFETs with Various Layouts
碩士 === 國立交通大學 === 電子研究所 === 106 === In this thesis, one of our new proprietary structures, namely multi-finger field device has been designed and implemented in nanoscale CMOS processes like TN90GUTM and TN40G to realize direct and precise extraction of the gate sidewall and finger-end fringing cap...
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5shvua |