High Performance Conductive Bridging Resistive Switching Memory: Fabrication and Characterization
博士 === 國立交通大學 === 電子研究所 === 106 === In this thesis, the improvement of reliability in the transition metal oxide (TMO) based conductive bridge random access memory (CBRAM) device was investigated. In the first part, we fabricated the SiCN/Al2O3 double layer CBRAM device for uniform endurance and hig...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/y2k6eq |