GaAs Epitaxial Growth on Aluminum Nanofilms and Its Device Performance
碩士 === 國立交通大學 === 電子研究所 === 106 === The thesis studies the growth of crystalline and high-quality gallium arsenide layers on aluminum thin films by using molecular beam epitaxy (MBE). Specially, aluminum thin films unexpectedly transform into aluminum arsenide. We analyze the material, electrical an...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/eh5xw7 |