A Study on the Characteristics of 4H-SiC UMOSFETs
碩士 === 國立交通大學 === 電子研究所 === 106 === Wide bandgap semiconductors are promising materials to replace Si to implement high-voltage and high current power device operating at high temperature. Among those materials, 4H-SiC is the most promising candidate due to its physical property, such as high critic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/aw9b45 |