Investigation and Analysis of Non-planar 2-D Transition-Metal-Dichalcogenide (TMD) FETs, Stacked Planar Hybrid Si/TMD Dual-Channel FETs, and Stacked Nanowire FETs for SRAM Applications
碩士 === 國立交通大學 === 電子研究所 === 106 === This thesis comprehensively investigates the 2D Transition-Metal- Dichalcogenide (TMD) de-vices targeting the ITRS 2028 (5.9nm) technology node with the aid of TCAD numerical sim-ulation. We benchmark the difference between non-planar and planar 2D TMD devices for...
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/phgvpq |
| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 106 === This thesis comprehensively investigates the 2D Transition-Metal- Dichalcogenide (TMD) de-vices targeting the ITRS 2028 (5.9nm) technology node with the aid of TCAD numerical sim-ulation. We benchmark the difference between non-planar and planar 2D TMD devices for standard 6T SRAM cells. Our study indicates that the non-planar 2D SRAM can possess higher cell stability and performance than the planar one.
We have also explored and evaluated the feasibility of a novel hybrid Si/TMD stacked dual-channel CMOS technology. A novel 4T SRAM cell is proposed with reduced the cell ar-ea and comparable read stability and superior write-ability as compared with the standard 6T SRAM.
In addition, we have evaluated the vertically stacked nanowires for SRAM applications. Our study indicates that the contact resistance may significantly degrade the read/write stabil-ity and the back-end-of-line parasitic capacitance needs to be carefully considered for the stacked nanowire SRAM.
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