Investigation of the growth of HfO2 on MoS2 surface by Atomic Layer Deposition
碩士 === 國立交通大學 === 材料科學與工程學系所 === 106 === This thesis investigated the growth and resultant surface properties of HfO2 dielectric layer on transition metal dichcogenides (TMDs), MoS2 with the use of atomic layer deposition (ALD). H2O and O2 plasma were used to modify the deposition of HfO2 as well as...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3bvhmg |