Investigation of the growth of HfO2 on MoS2 surface by Atomic Layer Deposition
碩士 === 國立交通大學 === 材料科學與工程學系所 === 106 === This thesis investigated the growth and resultant surface properties of HfO2 dielectric layer on transition metal dichcogenides (TMDs), MoS2 with the use of atomic layer deposition (ALD). H2O and O2 plasma were used to modify the deposition of HfO2 as well as...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3bvhmg |
| Summary: | 碩士 === 國立交通大學 === 材料科學與工程學系所 === 106 === This thesis investigated the growth and resultant surface properties of HfO2 dielectric layer on transition metal dichcogenides (TMDs), MoS2 with the use of atomic layer deposition (ALD). H2O and O2 plasma were used to modify the deposition of HfO2 as well as the activation of MoS2 surface. X-ray Photoelectron Spectroscopy was employed to explore the HfO2- MoS2 interface, and we obtained a spectral shift towards lower energy for Mo 3d-S 2p bonding upon the deposition of dielectric layer. Photoluminescence and X-ray Absorption Spectroscopy were utilized to the electronic structure and coordination. P-doping was obtained in grown HfO2. We found that gas-treament was facile to atomically bond oxygen and MoS2, thereby providing deposition site for HfO2. This thesis is aimed to shed lights to the growth mechanism and optimization of the growth of HfO2 dielectric TMDs which may benefit to the fabrication of 2D transistors.
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