Study of Oxide/Organic Semiconductor Devices with Nanostructure

博士 === 國立交通大學 === 光電工程研究所 === 106 === In this thesis, the spindle is surrounded by a combination of nanostructures and oxide semiconductor devices. We provide an amorphous indium gallium zinc oxide transistor with ultrahigh carrier mobility and a patternable silver electrode. In the final of this th...

Full description

Bibliographic Details
Main Authors: Liu, Hung-Chuan, 劉洪銓
Other Authors: Zan, Hsiao-Wen
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/5859gg
Description
Summary:博士 === 國立交通大學 === 光電工程研究所 === 106 === In this thesis, the spindle is surrounded by a combination of nanostructures and oxide semiconductor devices. We provide an amorphous indium gallium zinc oxide transistor with ultrahigh carrier mobility and a patternable silver electrode. In the final of this thesis, we preliminary test Corning materials that have high sensitivity, high current ammonia gas sensor and can be dissolved in a non-toxic solvent. This thesis is divided into three main parts. First of all, we introduce the silver focus on improving the carrier mobility of indium gallium zinc oxide transistor. We use elemental analysis to investigate the mechanism of device characteristic. The silver accelerates the transfer of electrons from source to drain leading to a 12 times increase in field-effect carrier mobility. The unchanged morphology of the conductive AgOx nanowires and the good contact between IGZO and nanowires are critical to achieving high effective field-effect mobility. The role of indium gallium zinc oxide film not only serves as the transport layer but also protects silver to maintain have high conductivity after post-annealing. The formation of robust conductive nanowire system in AgOxNW a-IGZO TFTs, giving rise to excellent device reliability with no hysteresis and a lifetime of over 93 days. Next, we use deep ultraviolet light to directly pattern indium zinc oxide thin film with silver and then make a forward-looking transparent electrode. It is noted that the capping material is not limited to IZO, DUV-patterned ZnO-capped silver is also successfully demonstrated to exhibit good enough transparency and conductivity. Professor Yang provides a PI flexible substrate that we also demonstrate the IZO-capped silver electrode on PI substrate then the result demonstrates on photovoltaic applications. Finally, we initially test the organic semiconductor materials provided by Cooperation Company and used in previous laboratory gas sensors. The materials can be dissolved in a non-toxic solvent to produce a uniformly thin semiconducting layer, have high mobility and highly stable shelf life without the need of an encapsulating layer. We compare the device response, lifetime and current level with our lab previous result of TFB. Both the device to detect ammonia sensing that the response and lifetime are similarly. It is noteworthy that Corning materials serve a high current. In a commercial application, Corning materials have an advantage.