Gate Dielectric Optimization of High Performance GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors.

Gate Dielectric Optimization of High Performance GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors.

碩士 === 國立交通大學 === 光電工程研究所 === 106 === Recent progress in high power field-effect transistors (FETs) was focused on GaN-based wide band-gap (WBG) semiconductors. Recent progress in high power fieldeffect transistors (FET) focused on GaN-based wide band-gap semiconductors. GaN-based high electron mobi...

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Bibliographic Details
Main Authors:	Yang, Shang-Chieh, 楊上頡
Other Authors:	Kuo, Hao-Chung
Format:	Others
Language:	en_US
Published:	2017
Online Access:	http://ndltd.ncl.edu.tw/handle/6x4kw9

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