Dicyanomethylene Substituted Indol-2-one Derivatives for N-channel Organic Field Effect Transistors

• Main Authors: CHEN,JIAN-YOU, 陳建佑
• Other Authors: Ming-Yu Kuo
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/rdg4j2

碩士 === 國立暨南國際大學 === 應用化學系 === 106 === Organic field-effect transistors (OFETs) have been attracted much attention inrecent decades owing to their potential application in numerous electronic devices, such as sensors, displays, and electronic papers. Currently, numerous progress in organic semiconductors (OSCs) has been made; however, the overall development of n-type OSCs still lags behind their p-type counterparts, especially in terms of charge transfer performance, ambient stability. In this study, we use Dicyanomethylene Substituted Indol-2-one Derivatives (DCMI) as OSCs. Its advantage lies in the symmetry of the structure and π conjugation system, which can enhance the jump range of electrons and the interaction between molecules to improve the charge carrier mobility, and donor-acceptor (D-A) type. The conjugate molecule is an important direction in the present study, which can reduce the energy gap of the molecule. The compound has a low LUMO energy level (<-4.0 eV), which is a stable N-type organic semiconductor material in the air. The use of CV electrochemical and UV-Vis optical properties to get its energy level and absorption range. The Uv-vis absorption spectrum of DCMI-C8 strong absorption between 415 nm and 562 nm, DCMI-NC8 at 386 nm and 556 nm, DCMI-N2C8 have broad and obvious absorption peaks at 367 nm and 562 nm, and the absorption maximum sites are respectively at 681 nm, 670 nm and 657 nm While the energy gap is 1.82 eV, 1.89 eV and 1.88 eV, and then use of CV the LUMO energy levels of the DCMI-C8、 DCMI-NC8、 DCMI-N2C8 molecules were calculated to be -4.02 eV, -4.11 eV and -4.16 eV, respectively indicating new material were favorable for efficient electron injection and also beneficial for air-stable n-type OFET. In order to investigate the charge transport properties of DCMI Derivatives, by fabricating field-effect in a bottom-gate/top-contact architectures. The thin films were thermally deposited on ODTS modified Si/SiO2 substrates, and then vacuum deposited to afford OFET devices.The excellent field-effect properites were observed in DCMI-N2C8 based devices fabricated at the substrate temperaturs(Ts) of 65°C. It exhibited high performance with electron mobility up to 5.91 x 10-2 cm2/Vs.