A Simulation Study of Dopingless Si-Nanosheet FET with Metal-Insulator-Semiconductor Contacts
碩士 === 國立成功大學 === 奈米積體電路工程碩士學位學程 === 106 === The transistor size was well scaled by following Moore’s law for sub-20 nm and beyond with the introduction of FinFETs, which were the revolutionary upgrades for the manufacturers until they (FinFETs) started experiencing various issues at sub-10 nm and b...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/djvpt2 |