Improvement of Resistive Switching Characteristics in BZT Films by Embedding a Thin Al Layer for Flexible Memory

• Main Authors: Qiu-ZheXie, 謝秋哲
• Other Authors: Yeong-Her Wang
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/3n4498

碩士 === 國立成功大學 === 微電子工程研究所 === 106 === In this work, a barium zirconate titanate thin film was prepared as the material for the resistive memory insulating layer using a sol-gel method. As a result of using aluminum as a capping layer to assist the carrier transport of the device, the set/reset voltage of the device was controlled within 3.5V, and the on/off ratio of the device was improved from 103 to 105. Furthermore, the power consumption of the device was greatly reduced. In addition, a flexible Indium Tin Oxide / Polyethylene Terephthalate (PET) substrate was used in this work, and the components still maintained complete bipolar switching behavior after 500 deflection tests. In terms of uniformity, the components with aluminum used as a capping layer also performed well. Simultaneously, the DC cycle was achieved more than 300 times in the durability tests. The physical properties of the material were thoroughly analyzed to verify the performance of the resistive memory element and the resistance conversion mechanism, and the electrical differences between BZT with and without a capping layer were discussed.