| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所 === 106 === In this study, the insulator layer was deposited on the ITO/Glass substrate by spin coating method and Al was deposited on the insulator layer as the top electrode using thermal evaporation to form a resistive memory with the metal/insulator/metal (MIM) structure. The insulator layers used in this experiment were divided into two types: one was polydimethylsiloxane (PDMS), and the other was poly(methyl methacrylate (PMMA), and zinc oxide nanoparticles (ZnO NPs) and graphene quantum dots (GQDs) were doped respectively to observe the switching characteristics and the conduction mechanism of the resistive memory.
In PDMS resistive memory, PDMS was firstly dissolved in toluene to improve the thickness of the insulator layer under different spinning speed, and then doped with zinc oxide nanoparticles to increase the write/read times of the device (~300 times). In PMMA resistive memory, GQD was initially dissolved directly in PMMA to form the insulator layer, and then the lithium fluoride (LiF) was deposited between the insulator layer and the top electrode to improve the stability and reliability, the writes/reads times (~500 times) was enhanced and the oxidation of Al on the top electrode was suppressed of the device.
The conduction mechanism of the above two devices was ohmic conduction mechanism in low resistance state (LRS); In high resistance state (HRS) Ohm's law dominate at low voltage region and space charge limitation current mechanism at high voltage was observed and they all had good ON/OFF current ratio (~104) and retention time (~104s). Therefore, polymers doped with nanoparticles or quantum dots to fabricate resistive memory could help to obtain good memory characteristics.
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