Effects of Counter-Doping Process on the Characteristics and Reliability of High Voltage MOS Transistors

Effects of Counter-Doping Process on the Characteristics and Reliability of High Voltage MOS Transistors

碩士 === 國立成功大學 === 微電子工程研究所 === 106

Bibliographic Details
Main Authors:	Chao-ChingChan, 詹朝景
Other Authors:	Jone-Fang Chen
Format:	Others
Language:	en_US
Published:	2018
Online Access:	http://ndltd.ncl.edu.tw/handle/8xzbx3

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