Development of Numerical System for Physical Vapor Transport Process Growing Silicon Carbide with COMSOL Multiphysics and Study of Introducing Different Cone-shaped Structure
碩士 === 國立成功大學 === 材料科學及工程學系 === 106 === Modeling of SiC growth is considered important for the design of crucible structure and the efficiency of experiment process. This paper shows that the growth rate profile of SiC bulk crystal grown by physical vapor transport process depends strongly on crucib...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/dkqdqj |