Development of Numerical System for Physical Vapor Transport Process Growing Silicon Carbide with COMSOL Multiphysics and Study of Introducing Different Cone-shaped Structure

• Main Authors: Cheng-FanTsai, 蔡正範
• Other Authors: Wen-Dung Hsu
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/dkqdqj

碩士 === 國立成功大學 === 材料科學及工程學系 === 106 === Modeling of SiC growth is considered important for the design of crucible structure and the efficiency of experiment process. This paper shows that the growth rate profile of SiC bulk crystal grown by physical vapor transport process depends strongly on crucible structure due to the variation of temperature field and species concentration distribution in growth chamber via simulation technique. The current paper aims at studying growth rate profile with different crucible structure designs by demonstrating each temperature field, species concentration distribution in the growth system. Proper crucible design can optimize the growth rate distribution which may avoid the formation of thermal stress and defects in an as-grown SiC crystal. To test how crucible structure affect crystal growth, six types of cone-shaped structure have been introduced into growth chamber and calculated the temperature field, concentration distribution and growth rate profile in our simulation. Numerical calculation is conducted by commercial simulation software, COMSOL Multiphysics based on finite element method (FEM), to build up PVT process for our SiC crystal growth simulation. In this study, the growth rate resulted from different crucible structures are presented based on simulation results. Hence, the favorable crucible structures are given out to predict crystal shape and improve crystal quality.