Investigation on the physical properties of β-Ga2O3 ultra-violet detectors prepared by atomic layer deposition
碩士 === 國立中興大學 === 物理學系所 === 106 === In this thesis, β-Ga2O3 thin films were prepared by atomic layer deposition (ALD) deposited at 600oC under atmospheric pressure using triethylgallium (TEGa) and nitrous oxide (N2O) precursors as sources of Ga and O element in β-Ga2O3 thin film. To fabricate a sola...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9a666k |