Fabrication of Near IR Nanosensor Devices by Photocatalystic Reduction of Graphene Oxide on ZnO Nanowires Array
碩士 === 國立中興大學 === 材料科學與工程學系所 === 106 === Graphene shows remarkable optical and electronic properties that attract enormous interest. Graphene was first exfoliated mechanically from graphite in 2004. Chemical vapor deposition (CVD) is a method which can produce high quality graphene film. However, th...
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ndltd-TW-106NCHU51590502019-05-16T01:24:29Z http://ndltd.ncl.edu.tw/handle/4e8j6s Fabrication of Near IR Nanosensor Devices by Photocatalystic Reduction of Graphene Oxide on ZnO Nanowires Array 以氧化鋅奈米線陣列光還原氧化石墨烯製作近紅外光感測元件 Feng-Ju Hsu 徐鳳汝 碩士 國立中興大學 材料科學與工程學系所 106 Graphene shows remarkable optical and electronic properties that attract enormous interest. Graphene was first exfoliated mechanically from graphite in 2004. Chemical vapor deposition (CVD) is a method which can produce high quality graphene film. However, the separation of graphene film grown on metallic catalyst by CVD usually uses the chemical etching method to dissolve the metallic catalyst which causes environmental pollution in large-scale fabrication. Thus, in this study, reduced graphene oxide (RGO) film was fabricated by photocatalystic reduction of graphene oxide on ZnO nanowire array grown by hydrothermal method. The structure and chemical changes of nanosturctures were analyzed by SEM, ESCA, FTIR, and Raman spectroscopy. The photosensing properties of RGO films were also investigated. The results show that the growth rate of RGO films was increased with increasing light intensity, and the thickness of film was increased by increasing reaction time. The graphene oxide suspension pretreated by ZnO nanowire array-photocatalystic reduction can increase the growth rate of RGO films because that the graphene oxide in the suspension was partial reduction after pretreatment process. The adsorbing clusters on the RGO film were reduced using this pretreatment suspension standing for 24 hours. The reduction mechanism is breaking C-OH bonds and forming C-H bonds. The RGO films have fast response in the visible and near-infrared sensing. For 660 nm visible light sensing, the response sensitivity was 103.1% at the applied voltage of 1V and the light intensity of 123.7 mW/cm2. A linear relationship exists between light intensity and photocurrent. For 940 nm near-infrared light sensing, the response sensitivity was 88.0% at the applied voltage of 1V and the light intensity of 16.0 mW/cm2. The slope of photocurrent vs light intensity curve was decrease with increasing of light intensity. 許薰丰 2018 學位論文 ; thesis 72 zh-TW |
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碩士 === 國立中興大學 === 材料科學與工程學系所 === 106 === Graphene shows remarkable optical and electronic properties that attract enormous interest. Graphene was first exfoliated mechanically from graphite in 2004. Chemical vapor deposition (CVD) is a method which can produce high quality graphene film. However, the separation of graphene film grown on metallic catalyst by CVD usually uses the chemical etching method to dissolve the metallic catalyst which causes environmental pollution in large-scale fabrication. Thus, in this study, reduced graphene oxide (RGO) film was fabricated by photocatalystic reduction of graphene oxide on ZnO nanowire array grown by hydrothermal method. The structure and chemical changes of nanosturctures were analyzed by SEM, ESCA, FTIR, and Raman spectroscopy. The photosensing properties of RGO films were also investigated.
The results show that the growth rate of RGO films was increased with increasing light intensity, and the thickness of film was increased by increasing reaction time.
The graphene oxide suspension pretreated by ZnO nanowire array-photocatalystic reduction can increase the growth rate of RGO films because that the graphene oxide in the suspension was partial reduction after pretreatment process. The adsorbing clusters on the RGO film were reduced using this pretreatment suspension standing for 24 hours. The reduction mechanism is breaking C-OH bonds and forming C-H bonds.
The RGO films have fast response in the visible and near-infrared sensing. For 660 nm visible light sensing, the response sensitivity was 103.1% at the applied voltage of 1V and the light intensity of 123.7 mW/cm2. A linear relationship exists between light intensity and photocurrent. For 940 nm near-infrared light sensing, the response sensitivity was 88.0% at the applied voltage of 1V and the light intensity of 16.0 mW/cm2. The slope of photocurrent vs light intensity curve was decrease with increasing of light intensity.
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author2 |
許薰丰 |
author_facet |
許薰丰 Feng-Ju Hsu 徐鳳汝 |
author |
Feng-Ju Hsu 徐鳳汝 |
spellingShingle |
Feng-Ju Hsu 徐鳳汝 Fabrication of Near IR Nanosensor Devices by Photocatalystic Reduction of Graphene Oxide on ZnO Nanowires Array |
author_sort |
Feng-Ju Hsu |
title |
Fabrication of Near IR Nanosensor Devices by Photocatalystic Reduction of Graphene Oxide on ZnO Nanowires Array |
title_short |
Fabrication of Near IR Nanosensor Devices by Photocatalystic Reduction of Graphene Oxide on ZnO Nanowires Array |
title_full |
Fabrication of Near IR Nanosensor Devices by Photocatalystic Reduction of Graphene Oxide on ZnO Nanowires Array |
title_fullStr |
Fabrication of Near IR Nanosensor Devices by Photocatalystic Reduction of Graphene Oxide on ZnO Nanowires Array |
title_full_unstemmed |
Fabrication of Near IR Nanosensor Devices by Photocatalystic Reduction of Graphene Oxide on ZnO Nanowires Array |
title_sort |
fabrication of near ir nanosensor devices by photocatalystic reduction of graphene oxide on zno nanowires array |
publishDate |
2018 |
url |
http://ndltd.ncl.edu.tw/handle/4e8j6s |
work_keys_str_mv |
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